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SPN125N04A - N-Channel Enhancement Mode MOSFET

Description

The SPN125N04A is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • 40V/125A, RDS(ON)=3.3mΩ@VGS=10V.
  • 40V/125A, RDS(ON)=4.5mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • TO-220-3L/TO-220F-3L/TO-252-2L package design PIN.

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Datasheet Details

Part number SPN125N04A
Manufacturer SYNC POWER
File Size 275.48 KB
Description N-Channel Enhancement Mode MOSFET
Datasheet download datasheet SPN125N04A Datasheet
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SPN125N04A N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN125N04A is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suitable for synchronous rectifier application, Motor control power management and other Power Tool circuits. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. APPLICATIONS  DC/DC Converter  Load Switch  SMPS Secondary Side Synchronous Rectifier  Motor Control  Power Tool FEATURES  40V/125A, RDS(ON)=3.3mΩ@VGS=10V  40V/125A, RDS(ON)=4.5mΩ@VGS=4.
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