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SPN120T06 - N-Channel MOSFET

Description

The SPN120T06 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • 60V/108A,RDS(ON)=4.9mΩ@VGS=10V.
  • 60V/108A,RDS(ON)=7.5mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • TO-220-3L/TO-220F-3L/TO-252-2L package design PIN.

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Datasheet preview – SPN120T06

Datasheet Details

Part number SPN120T06
Manufacturer SYNC POWER
File Size 459.37 KB
Description N-Channel MOSFET
Datasheet download datasheet SPN120T06 Datasheet
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SPN120T06 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN120T06 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high-side switching. APPLICATIONS  DC/DC Converter  Load Switch  Synchronous Buck Converter  UPS  Motor Control  Power Tool FEATURES  60V/108A,RDS(ON)=4.9mΩ@VGS=10V  60V/108A,RDS(ON)=7.5mΩ@VGS=4.
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