SSF65R190S2 Datasheet PDF - SUPER-SEMI 650V N-Channel Super-Junction MOSFET Specs

SSF65R190S2 - 650V N-Channel Super-Junction MOSFET

This page provides the datasheet information for the SSF65R190S2, a member of the SSF65R190S2-SUPER 650V N-Channel Super-Junction MOSFET family.

Datasheet Summary

Description

SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

Features

Multi-Epi process SJ-FET.
700V @TJ = 150 ℃.
Typ. RDS(on) = 0.16Ω.
Ultra Low Gate Charge (typ. Qg = 36.5nC).
100% avalanche tested SSF65R190S2 Absolute Maximum Ratings Symbol Parameter VDSS ID IDM VGSS Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃) Drain Current - Pulsed (Note 1) Gate-Source voltage EAS IAS dv/dt Single Pulsed Avalanche Energy (Note 2) Avalanche current, repetitive or not-repetitive (pul.

Datasheet Details

Part number	SSF65R190S2
Manufacturer	SUPER-SEMI
File Size	704.19 KB
Description	650V N-Channel Super-Junction MOSFET
Datasheet	SSF65R190S2 Datasheet
Additional preview pages of the SSF65R190S2 datasheet.

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Full PDF Text Transcription

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SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 650V Super Junction Power MOSFET Gen-Ⅱ SS*65R190S2 Rev. 1.7 Aug. 2022 www.supersemi.com.cn SSF65R190S2 650V N-Channel Super-Junction MOSFET Gen-Ⅱ SSF65R190S2 650V N-Channel Super-Junction MOSFET Gen-Ⅱ Description SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJ-FET is suitable for various AC/DC power conversion in switching mode operation for higher efficiency.

Published: Sep 12, 2024 |