SSF6005 Datasheet PDF - GOOD-ARK N-Channel MOSFET Specs

SSF6005 - N-Channel MOSFET

This page provides the datasheet information for the SSF6005, a member of the SSF6005-GOOD N-Channel MOSFET family.

Datasheet Summary

Description

It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.

Features

TO-220.
Advanced trench MOSFET process technology.
Special designed for PWM, load switching and general purpose.

Datasheet Details

Part number	SSF6005
Manufacturer	GOOD-ARK
File Size	1.09 MB
Description	N-Channel MOSFET
Datasheet	SSF6005 Datasheet
Additional preview pages of the SSF6005 datasheet.

📁 Similar Datasheet

SSF6005 - MOSFET (Silikron Semiconductor)

SSF6007 - MOSFET (Silikron Semiconductor)

SSF6008 - MOSFET (Silikron Semiconductor Co)

SSF6010 - Power switching application (Silikron Semiconductor Co)

SSF6010A - MOSFET (Silikron Semiconductor)

SSF6014 - MOSFET (Silikron Semiconductor Co)

SSF6014A - MOSFET (Silikron Semiconductor)

SSF6014D - MOSFET (Silikron Semiconductor)

SSF6014J7 - MOSFET (Silikron Semiconductor)

SSF6014J8 - MOSFET (Silikron Semiconductor)

Full PDF Text Transcription

Click to expand full text

Main Product Characteristics VDSS 60V RDS(on) 2.7mohm(typ.) ID 160A Features and Benefits TO-220  Advanced trench MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  175℃ operating temperature  Lead free product SSF6005 60V N-Channel MOSFET Marking and Pin Assignment Schematic Diagram Description It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.

Published: Sep 22, 2016 |