SSF6014J8 - MOSFET

Datasheet Summary

Description

It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.

Features

DFN3.3x3.3 Bottom view.
Advanced trench MOSFET process technology.
Special designed for PWM, load switching and general purpose.

Silikron Semiconductor

📥 Download Datasheet

Datasheet Details

Part number	SSF6014J8
Manufacturer	SilikrON Semiconductor
File Size	806.25 KB
Description	MOSFET
Datasheet	SSF6014J8 Datasheet
Additional preview pages of the SSF6014J8 datasheet.

📁 Similar Datasheet

SSF6014 - MOSFET (Silikron Semiconductor Co)
SSF6014 - N-Channel MOSFET (GOOD-ARK)
SSF6014A - N-Channel MOSFET (GOOD-ARK)
SSF6014D - 60V N-Channel MOSFET (GOOD-ARK)
SSF6010 - Power switching application (Silikron Semiconductor Co)
SSF6010 - 60V N-Channel MOSFET (GOOD-ARK)
SSF6010A - 60V N-Channel MOSFET (GOOD-ARK)
SSF6010G - N-Channel MOSFET (GOOD-ARK)
SSF6005 - N-Channel MOSFET (GOOD-ARK)
SSF6007 - 50V P-Channel MOSFET (GOOD-ARK)

Other Datasheets by Silikron Semiconductor

SSF6014J7 - MOSFET
SSF6014A - MOSFET
SSF6014D - MOSFET
SSF6010A - MOSFET
SSF6005 - MOSFET
SSF6007 - MOSFET
SSF6072G5 - MOSFET
SSF6092G1 - MOSFET

Full PDF Text Transcription

Click to expand full text

Main Product Characteristics: VDSS 60V RDS(on) ID 16mΩ (typ.) 22A Features and Benefits: DFN3.3x3.3 Bottom view  Advanced trench MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  175℃ operating temperature SSF6014J8 Pin Assignment Schematic diagram Description: It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.

Published: Feb 28, 2017 |