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SSF65R190SFD - 650V N-Channel Super-Junction MOSFET

Datasheet Summary

Description

SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

Features

  • Multi-Epi process SJ-FET.
  • Fast-Recovery body diode.
  • Extremely Low Reverse Recovery Charge.
  • 700V @TJ = 150 ℃.
  • Typ. RDS(on) = 0.175Ω.
  • Ultra Low Gate Charge (typ. Qg = 36.5nC).
  • 100% avalanche tested SSF65R190SFD SSP65R190SFD SSW65R190SFD TO-247 Absolute Maximum Ratings Symbol Parameter VDSS ID IDM VGSS Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃) Drain Current - Pulsed (Note 1) Gate-Sou.

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Datasheet Details

Part number SSF65R190SFD
Manufacturer Super Semiconductor
File Size 1.00 MB
Description 650V N-Channel Super-Junction MOSFET
Datasheet download datasheet SSF65R190SFD Datasheet
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Full PDF Text Transcription

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SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 650V Super Junction Power MOSFET Gen-Ⅱ With Fast-Recovery SS*65R190SFD Rev. 1.5 Apr. 2022 www.supersemi.com.cn SSF65R190SFD/SSP65R190SFD/SSW65R190SFD 650V N-Channel Super-Junction MOSFET Gen-Ⅱ With Fast-Recovery SSF65R190SFD/SSP65R190SFD/SSW65R190SFD 650V N-Channel Super-Junction MOSFET Gen-Ⅱ With Fast-Recovery Description SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy.
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