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VNW50N04A - FULLY AUTOPROTECTED POWER MOSFET

General Description

te c power MOSFETS in DC to 50 KHz applications.

Key Features

  • Figure 1. Package Type Vclamp RDS(on) Ilim VNW50N04A 42 V 0.012 Ω 50 A t(s).
  • LINEAR.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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VNW50N04A "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET Table 1. General Features Figure 1. Package Type Vclamp RDS(on) Ilim VNW50N04A 42 V 0.012 Ω 50 A t(s) ■ LINEAR CURRENT LIMITATION c ■ THERMAL SHUT DOWN u ■ SHORT CIRCUIT PROTECTION rod ■ INTEGRATED CLAMP P t(s) ■ LOW CURRENT DRAWN FROM INPUT PIN te c ■ DIAGNOSTIC FEEDBACK THROUGH INPUT le u PIN so rod ■ ESD PROTECTION ■ DIRECT ACCESS TO THE GATE OF THE b P POWER MOSFET (ANALOG DRIVING) - O te ■ COMPATIBLE WITH STANDARD POWER ) le MOSFET t(s so ■ STANDARD TO-247 PACKAGE duc Ob DESCRIPTION ro ) - The VNW50N04A, is a monolithic device made P t(s using STMicroelectronics VIPower M0 Technology, intended for replacement of standard te c power MOSFETS in DC to 50 KHz applications.