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VNW100N04 - FULLY AUTOPROTECTED POWER MOSFET

General Description

ro ) The VNW100N04, is a monolithic device made P t(s using STMicroelectronics VIPower M0 te c Technology, intended for replacement of standard u power MOSFETS in DC to 50 KHz applications.

Key Features

  • Figure 1. Package Type Vclamp RDS(on) Ilim VNW100N04 42 V 0.012 Ω 100 A t(s).
  • LINEAR.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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VNW100N04 "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET Table 1. General Features Figure 1. Package Type Vclamp RDS(on) Ilim VNW100N04 42 V 0.012 Ω 100 A t(s) ■ LINEAR CURRENT LIMITATION c ■ THERMAL SHUT DOWN u ■ SHORT CIRCUIT PROTECTION rod ■ INTEGRATED CLAMP te P t(s) ■ LOW CURRENT DRAWN FROM INPUT PIN ■ DIAGNOSTIC FEEDBACK THROUGH INPUT le uc PIN so rod ■ ESD PROTECTION ■ DIRECT ACCESS TO THE GATE OF THE b P POWER MOSFET (ANALOG DRIVING) - O te ■ COMPATIBLE WITH STANDARD POWER ) le MOSFET t(s so ■ STANDARD TO-247 PACKAGE duc - Ob DESCRIPTION ro ) The VNW100N04, is a monolithic device made P t(s using STMicroelectronics VIPower M0 te c Technology, intended for replacement of standard u power MOSFETS in DC to 50 KHz applications.