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VNW50N04 - FULLY AUTOPROTECTED POWER MOSFET

General Description

The VNW50N04 is a monolithic device made using SGS-THOMSON Vertical Intelligent Power M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications.

Key Features

  • During normal operation, the Input pin is electrically connected to the gate of the internal power MOSFET. The device then behaves like a standard power MOSFET and can be used as a switch from DC to 50 KHz. The only difference from the user’s standpoint is that a small DC current (Iiss) flows into the Input pin in order to supply the internal circuitry. The device integrates: -.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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VNW50N04 "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET TYPE VNW50N04 Vclamp 42 V RDS(on) 0.012 Ω Ilim 50 A s LINEAR CURRENT LIMITATION s THERMAL SHUT DOWN s SHORT CIRCUIT PROTECTION s INTEGRATED CLAMP s LOW CURRENT DRAWN FROM INPUT PIN s DIAGNOSTIC FEEDBACK THROUGH INPUT PIN s ESD PROTECTION s DIRECT ACCESS TO THE GATE OF THE POWER MOSFET (ANALOG DRIVING) s COMPATIBLE WITH STANDARD POWER MOSFET s STANDARD TO-247 PACKAGE DESCRIPTION The VNW50N04 is a monolithic device made using SGS-THOMSON Vertical Intelligent Power M0 Technology, intended for replacement of standard power MOSFETS in DC to 50 KHz applications. Built-in thermal shut-down, linear BLOCK DIAGRAM 3 2 1 TO-247 current limitation and overvoltage clamp protect the chip in harsh enviroments.