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STY80NM60N - N-channel Power MOSFET

General Description

This series of devices implements second generation MDmesh™ technology.

This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

Key Features

  • www. DataSheet4U. com Type VDSS 600 V RDS(on) < 0.040 Ω ID 80 A Pw 560 W STY80NM60N.
  • 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Max247 1 2 3.

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STY80NM60N N-channel 600 V - 0.035 Ω - 80 A - Max247 second generation MDmesh™ Power MOSFET Preliminary Data Features www.DataSheet4U.com Type VDSS 600 V RDS(on) < 0.040 Ω ID 80 A Pw 560 W STY80NM60N ■ ■ ■ 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Max247 1 2 3 Application ■ Switching applications Description This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Figure 1. Internal schematic diagram Table 1.