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STY105NM50N - N-CHANNEL POWER MOSFET

Description

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology.

This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

Features

  • 3 2 1 Max247 Figure 1. Internal schematic diagram '  .
  •  6  Order code STY105NM50N VDSS @TjMAX 550 V RDS(on) max < 0.022 Ω ID 110 A.
  • Max247 worldwide best RDS(on).
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance.

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Full PDF Text Transcription

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STY105NM50N N-channel 500 V, 0.019 Ω typ., 110 A, MDmesh™ II Power MOSFET in a Max247 package Datasheet - production data Features 3 2 1 Max247 Figure 1. Internal schematic diagram '  *  6  Order code STY105NM50N VDSS @TjMAX 550 V RDS(on) max < 0.022 Ω ID 110 A • Max247 worldwide best RDS(on) • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance Applications • Switching applications Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
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