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STY100NM60N
Features
N-channel 600 V, 0.028 Ω typ., 98 A MDmesh™ II Power MOSFET in a Max247 package
Datasheet — production data
Type STY100NM60N
VDSS @ TJmax
650 V
RDS(on) max < 0.029 Ω
ID 98 A
■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance
Applications
■ Switching applications
Description
This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
3 2 1 Max247
Figure 1. Internal schematic diagram
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Table 1.
STY100NM60N Datasheet
