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STW3N170 - N-Channel Power MOSFET

Description

This Power MOSFET is designed using the STMicroelectronics consolidated striplayout-based MESH OVERLAY process.

The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers.

Features

  • 3 2 1 TO-247 D(2, TAB) Order code VDS RDS(on) max. STW3N170 1700 V 13 Ω.
  • 100% avalanche tested.
  • Intrinsic capacitances and Qg minimized.
  • High speed switching.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STW3N170 Datasheet N-channel 1700 V, 7 Ω typ., 2.6 A PowerMESH Power MOSFET in a TO-247 package Features 3 2 1 TO-247 D(2, TAB) Order code VDS RDS(on) max. STW3N170 1700 V 13 Ω • 100% avalanche tested • Intrinsic capacitances and Qg minimized • High speed switching Applications • Switching applications ID 2.6 A Description G(1) S(3) This Power MOSFET is designed using the STMicroelectronics consolidated striplayout-based MESH OVERLAY process. The result is a product that matches or improves on the performance of comparable standard parts from other manufacturers.
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