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STW23N85K5 - N-channel Power MOSFET

Description

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure.

The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Features

  • Order code VDS RDS(on) max. ID PTOT STW23N85K5 850 V 0.275 Ω 19 A 250 W.
  • Industry’s lowest RDS(on) x area.
  • Industry’s best figure of merit (FoM).
  • Ultra low gate charge.
  • 100% avalanche tested.
  • Zener-protected.

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Full PDF Text Transcription

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STW23N85K5 N-channel 850 V, 0.2 Ω typ., 19 A MDmesh™ K5 Power MOSFET in a TO-247 package Datasheet - production data 3 2 1 TO-247 Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max. ID PTOT STW23N85K5 850 V 0.275 Ω 19 A 250 W • Industry’s lowest RDS(on) x area • Industry’s best figure of merit (FoM) • Ultra low gate charge • 100% avalanche tested • Zener-protected Applications • Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
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