Datasheet4U Logo Datasheet4U.com

STW23N80K5 - N-CHANNEL MOSFET

Description

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure.

The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Features

  • Order code VDS RDS(on) max. ID PTOT STW23N80K5 800 V 0.28 Ω 16 A 190 W.
  • Industry’s lowest RDS(on) x area.
  • Industry’s best figure of merit (FoM).
  • Ultra low gate charge.
  • 100% avalanche tested.
  • Zener-protected.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STW23NM50N N-Channel MOSFET INCHANGE
STW23NM60ND N-Channel MOSFET INCHANGE
STW200NF03 N-CHANNEL Power MOSFET ST Microelectronics
STW20N65M5 N-Channel MOSFET INCHANGE
STW20NA50 N-CHANNEL Power MOSFET ST Microelectronics

Other Datasheets by STMicroelectronics

Part Number Description
STW23N85K5 N-channel Power MOSFET
STW23NM50N N-channel Power MOSFET
STW23NM60N N-channel Power MOSFET
STW23NM60ND N-channel Power MOSFET
STW20N60M2-EP N-CHANNEL POWER MOSFET

Full PDF Text Transcription

Click to expand full text
STW23N80K5 N-channel 800 V, 0.23 Ω typ., 16 A MDmesh™ K5 Power MOSFET in a TO-247 package Datasheet - production data 3 2 1 TO-247 Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max. ID PTOT STW23N80K5 800 V 0.28 Ω 16 A 190 W  Industry’s lowest RDS(on) x area  Industry’s best figure of merit (FoM)  Ultra low gate charge  100% avalanche tested  Zener-protected Applications  Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Published: |