STW13NB60FI - N - CHANNEL PowerMESH MOSFET

STMicroelectronics

Download the STW13NB60FI datasheet PDF. This datasheet also covers the STW13NB60 variant, as both devices belong to the same n - channel powermesh mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.

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STW13NB60FI n - channel powermesh mosfet by STMicroelectronics - Datasheet Preview — Note: The manufacturer provides a single datasheet file (STW13NB60_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	STW13NB60FI
Manufacturer	STMicroelectronics
File Size	143.76 KB
Description	N - CHANNEL PowerMESH MOSFET
Datasheet	STW13NB60FI Datasheet

Other Datasheets by STMicroelectronics

Part Number	Description
STW13NB60	N - CHANNEL PowerMESH MOSFET
STW13N60M2	N-channel Power MOSFET
STW13N80K5	N-channel Power MOSFET
STW13NK100Z	N-CHANNEL Power MOSFET
STW13NK80Z	N-CHANNEL Power MOSFET
STW13NM50N	N-channel Power MOSFET
STW13NM60N	N-CHANNEL Power MOSFET
STW13009	High Voltage Fast Switching NPN Power Transistor
STW10N105K5	N-channel Power MOSFET
STW10N95K5	N-channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

® STW13NB60 STH13NB60FI N - CHANNEL 600V - 0.48Ω - 13A - TO-247/ISOWATT218 PowerMESH™ MOSFET TYPE ST W13NB60 ST H13NB60FI www.DataSheet4U.com s s s s s V DSS 600 V 600 V R DS(on) <0.54 Ω <0.54 Ω ID 13 A 8.6 A TYPICAL RDS(on) = 0.48 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 2 1 3 2 1 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.