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STW10N105K5 - N-channel Power MOSFET

General Description

These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure.

The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Key Features

  • Order codes STF10N105K5 STP10N105K5 STW10N105K5 VDS 1050 V RDS(on) max. ID PTOT 1.3 Ω 30 W 6 A 130 W 130 W 3 12 TO-247 Figure 1: Internal schematic diagram D(2, TAB) G(1) S(3) AM01476v1.
  • Industry’s lowest RDS(on).
  • Industry’s best figure of merit (FoM).
  • Ultra low gate charge.
  • 100% avalanche tested.
  • Zener-protected.

📥 Download Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STF10N105K5, STP10N105K5, STW10N105K5 N-channel 1050 V, 1 Ω typ., 6 A MDmesh™ K5 Power MOSFETs in TO-220, TO-220FP and TO-247 packages Datasheet - production data TAB 3 2 1 TO-220FP 3 2 1 TO-220 Features Order codes STF10N105K5 STP10N105K5 STW10N105K5 VDS 1050 V RDS(on) max. ID PTOT 1.3 Ω 30 W 6 A 130 W 130 W 3 12 TO-247 Figure 1: Internal schematic diagram D(2, TAB) G(1) S(3) AM01476v1  Industry’s lowest RDS(on)  Industry’s best figure of merit (FoM)  Ultra low gate charge  100% avalanche tested  Zener-protected Applications  Switching applications Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure.