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STW13009 - High Voltage Fast Switching NPN Power Transistor

General Description

The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability.

It uses a Hollow emitter structure to enhance switching speeds.

Figure 1.

Key Features

  • Low spread of dynamic parameters.
  • High voltage capability.
  • Minimum lot-to-lot spread for reliable operation.
  • Very high switching speed.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STW13009 High voltage fast-switching NPN power transistor Features ■ Low spread of dynamic parameters ■ High voltage capability ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Application ■ Switch mode power supplies Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. It uses a Hollow emitter structure to enhance switching speeds. 3 2 1 TO-247 Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking (1) Package Packaging STW13009 W13009 L W13009 H TO-247 Tube 1. Product is pre-selected in DC current gain (group L and group H). STMicroelectronics reserves the right to ship either groups according to production availability.