Datasheet4U Logo Datasheet4U.com

STU85N3LH5 - N-channel Power MOSFET

Description

This product utilizes the 5th generation of design rules of ST’s proprietary STripFETTM technology.

Qg, in the standard packages, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved.

Features

  • Type STD85N3LH5 STP85N3LH5 STU85N3LH5 VDSS RDS(on) max. ID 30 V < 0.005 Ω 80 A.
  • RDS(on).
  • Qg industry benchmark.
  • Extremely low on-resistance RDS(on).
  • High avalanche ruggedness.
  • Low gate drive power losses.

📥 Download Datasheet

Datasheet preview – STU85N3LH5

Datasheet Details

Part number STU85N3LH5
Manufacturer STMicroelectronics
File Size 809.16 KB
Description N-channel Power MOSFET
Datasheet download datasheet STU85N3LH5 Datasheet
Additional preview pages of the STU85N3LH5 datasheet.

📁 Similar Datasheet

  • STU8N65M5 - Power MOSFETs (ST Microelectronics)
  • STU8N65M5 - N-Channel MOSFET (INCHANGE)
  • STU8NM50N - N-Channel MOSFET (INCHANGE)
  • STU8NM60ND - N-Channel MOSFET (INCHANGE)
  • STU03L01 - N-Channel Logic Level Enhancement Mode Field Effect Transistor (SamHop Microelectronics)
  • STU03L07 - N-Channel Logic Level Enhancement Mode Field Effect Transistor (SamHop Microelectronics)
  • STU03N20 - N-Channel MOSFET (SamHop Microelectronics)
  • STU04N20 - N-Channel MOSFET (SamHop Microelectronics)
  • STU06L01 - N-Channel Logic Level Enhancement Mode Field Effect Transistor (SamHop Microelectronics)
  • STU09N25 - N-Channel MOSFET (SamHop Microelectronics)
Other Datasheets by STMicroelectronics

Full PDF Text Transcription

Click to expand full text
STD85N3LH5 STP85N3LH5, STU85N3LH5 N-channel 30 V, 0.0042 Ω , 80 A, DPAK, TO-220, IPAK STripFET™ V Power MOSFET Features Type STD85N3LH5 STP85N3LH5 STU85N3LH5 VDSS RDS(on) max. ID 30 V < 0.005 Ω 80 A ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ High avalanche ruggedness ■ Low gate drive power losses Application Switching applications Description This product utilizes the 5th generation of design rules of ST’s proprietary STripFETTM technology. The lowest available RDS(on)*Qg, in the standard packages, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved. 3 1 DPAK IPAK 3 2 1 3 2 1 TO-220 Figure 1. Internal schematic diagram Table 1.
Published: |