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STU8NM50N - N-Channel MOSFET

Features

  • Drain Current.
  • ID= 5A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 500V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 790mΩ(Max).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet Details

Part number STU8NM50N
Manufacturer INCHANGE
File Size 283.22 KB
Description N-Channel MOSFET
Datasheet download datasheet STU8NM50N Datasheet
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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor STU8NM50N FEATURES ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 790mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage-Continuous ±25 V ID Drain Current-Continuous 5 A PD Total Dissipation @TC=25℃ 45 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 2.78 ℃/W isc website：www.iscsemi.
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