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STU80N4F6 - N-channel Power MOSFET

Description

developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate structure.

The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.

Table 1.

Features

  • TAB IPAK 3 2 1 Figure 1. Internal schematic diagram ' Ć7$% .
  •  Order code STU80N4F6 VDS 40 V RDS(on) max ID 6.3 mΩ 80 A.
  • Low gate charge.
  • Very low on-resistance.
  • High avalanche ruggedness.

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Datasheet preview – STU80N4F6

Datasheet Details

Part number STU80N4F6
Manufacturer STMicroelectronics
File Size 620.96 KB
Description N-channel Power MOSFET
Datasheet download datasheet STU80N4F6 Datasheet
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Full PDF Text Transcription

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STU80N4F6 N-channel 40 V, 5.8 mΩ typ., 80 A STripFET™ VI DeepGATE™ Power MOSFET in a IPAK package Datasheet − production data Features TAB IPAK 3 2 1 Figure 1. Internal schematic diagram ' Ć7$% *  Order code STU80N4F6 VDS 40 V RDS(on) max ID 6.3 mΩ 80 A • Low gate charge • Very low on-resistance • High avalanche ruggedness Applications • Switching applications Description This device is an N-channel Power MOSFET th developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. 6  $0Y Order code STU80N4F6 Table 1. Device summary Marking Package 80N4F6 IPAK Packaging Tube February 2014 This is information on a product in full production.
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