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STS8DN6LF6AG - Automotive-grade dual N-channel Power MOSFET

Description

This device is a dual N-channel Power MOSFET developed using the STripFET F6 technology with a new trench gate structure.

The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Features

  • Order code VDS RDS(on) max. ID 4 1 STS8DN6LF6AG 60 V 24 mΩ 8A SO-8 D1(7, 8) D2(5, 6).
  • AEC-Q101 qualified.
  • Very low on-resistance.
  • Very low gate charge.
  • High avalanche ruggedness.
  • Low gate drive power loss.
  • Logic level G1(2) G2(4).

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Full PDF Text Transcription

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STS8DN6LF6AG Datasheet Automotive-grade dual N-channel 60 V, 21 mΩ typ., 8 A STripFET F6 Power MOSFET in a SO-8 package 5 8 Features Order code VDS RDS(on) max. ID 4 1 STS8DN6LF6AG 60 V 24 mΩ 8A SO-8 D1(7, 8) D2(5, 6) • AEC-Q101 qualified • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss • Logic level G1(2) G2(4) Applications • Switching applications PTOT 3.2 W S1(1) S2(3) SC12820 Description This device is a dual N-channel Power MOSFET developed using the STripFET F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
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