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STP26N60M2 - N-Channel Power MOSFET

Description

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology.

Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.

Features

  • Order code STP26N60M2 STW26N60M2 VDS @ TJmax 650 V RDS(on) max. 0.165 Ω ID 20 A PTOT 169 W.
  • Extremely low gate charge.
  • Excellent output capacitance (COSS) profile.
  • 100% avalanche tested.
  • Zener-protected.

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Full PDF Text Transcription

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STP26N60M2, STW26N60M2 N-channel 600 V, 0.14 Ω typ., 20 A MDmesh™ M2 Power MOSFETs in TO-220 and TO-247 packages Datasheet - production data TAB 3 2 1 TO-220 3 2 1 TO-247 Figure 1: Internal schematic diagram Features Order code STP26N60M2 STW26N60M2 VDS @ TJmax 650 V RDS(on) max. 0.165 Ω ID 20 A PTOT 169 W  Extremely low gate charge  Excellent output capacitance (COSS) profile  100% avalanche tested  Zener-protected Applications  Switching applications Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.
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