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STI260N6F6 STP260N6F6
N-channel 60 V, 0.0024 Ω, 120 A STripFET™ VI DeepGATE™ Power MOSFET in TO-220 and I²PAK packages
Features
Order codes
STI260N6F6 STP260N6F6
VDSS 60 V
RDS(on) max
ID
< 0.003 Ω 120 A
■ Low gate charge ■ Very low on-resistance ■ High avalanche ruggedness
Application
■ Switching applications
Description
These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages.
TAB
TAB
123
I²PAK
3 2 1
TO-220
Figure 1. Internal schematic diagram
$ 4!"
'
3
!-V
Table 1.
STP260N6F6 Datasheet
