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STP260N4F7 - N-channel Power MOSFET

Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Features

  • Order code STP260N4F7 VDS 40 V RDS(on)max 2.2 mΩ ID 120 A PTOT 235 W Figure 1: Internal schematic diagram D(2, TAB) G(1) Features.
  • Among the lowest RDS(on) on the market.
  • Excellent FoM (figure of merit).
  • Low Crss/Ciss ratio for EMI immunity.
  • High avalanche ruggedness.

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Full PDF Text Transcription

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STP260N4F7 N-channel 40 V, 1.8 mΩ typ., 120 A STripFET™ F7 Power MOSFET in a TO-220 package Datasheet - production data Features Order code STP260N4F7 VDS 40 V RDS(on)max 2.2 mΩ ID 120 A PTOT 235 W Figure 1: Internal schematic diagram D(2, TAB) G(1) Features  Among the lowest RDS(on) on the market  Excellent FoM (figure of merit)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness Applications  Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.
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