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STN4NF06L - Automotive-grade N-channel MOSFET

Description

Int_schem_nTnZ_SOT_223 gate charge.

Features

  • Order code VDS RDS(on) max. ID STN4NF06L 60 V < 0.1 Ω 4A.
  • AEC-Q101 qualified.
  • Exceptional dv/dt capability.
  • 100% avalanche tested.
  • Low gate charge.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STN4NF06L Datasheet Automotive-grade N-channel 60 V, 0.07 Ω typ., 4 A STripFET II Power MOSFET in a SOT-223 package 4 3 2 1 SOT-223 D(2, 4) Features Order code VDS RDS(on) max. ID STN4NF06L 60 V < 0.1 Ω 4A • AEC-Q101 qualified • Exceptional dv/dt capability • 100% avalanche tested • Low gate charge Applications • Switching applications G(1) Description This Power MOSFET has been developed using STMicroelectronics' unique S(3) STripFET process, which is specifically designed to minimize input capacitance and Int_schem_nTnZ_SOT_223 gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.
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