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STL4LN80K5 - N-channel Power MOSFET

Description

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure.

The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

Features

  • Order code STL4LN80K5 VDS 800 V RDS(on) max. 2.6 Ω ID 2A.
  • Industry’s lowest RDS(on).
  • area.
  • Industry’s best FoM (figure of merit).
  • Ultra low-gate charge.
  • 100 % avalanche tested.
  • Zener-protected.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STL4LN80K5 N-channel 800 V, 2.1 Ω typ., 2 A MDmesh™ K5 Power MOSFET in a PowerFLAT™ 5x6 VHV package Datasheet - production data 1 2 3 4 PowerFLAT™ 5x6 VHV Figure 1: Internal schematic diagram D(5, 6, 7, 8) 8 76 5 G(4) S(1, 2, 3) 12 34 Top View Features Order code STL4LN80K5 VDS 800 V RDS(on) max. 2.6 Ω ID 2A  Industry’s lowest RDS(on) * area  Industry’s best FoM (figure of merit)  Ultra low-gate charge  100 % avalanche tested  Zener-protected Applications  Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure.
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