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STL42P6LLF6 - P-channel Power MOSFET

Description

This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure.

The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Features

  • Order code V DS STL42P6LLF6 -60 V.
  • Very low on-resistance.
  • Very low gate charge.
  • High avalanche ruggedness.
  • Low gate drive power loss RDS(on) max 26 mΩ ID -42 A.

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Full PDF Text Transcription

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D(5, 6, 7, 8) G(4) S(1, 2, 3) STL42P6LLF6 Datasheet P-channel -60 V, 23 mΩ typ., -42 A STripFET F6 Power MOSFET in a PowerFLAT 5x6 package Features Order code V DS STL42P6LLF6 -60 V • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss RDS(on) max 26 mΩ ID -42 A Applications • Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
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