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STL42P4LLF6 - P-CHANNEL POWER MOSFET

Description

This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure.

The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Features

  • Order code VDS STL42P4LLF6 40 V.
  • Very low on-resistance.
  • Very low gate charge.
  • High avalanche ruggedness.
  • Low gate drive power loss RDS(on) max. 18 mΩ ID 42 A PTOT 75 W.

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Full PDF Text Transcription

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STL42P4LLF6 Datasheet P-channel 40 V, 15.5 mΩ typ., 42 A STripFET F6 DeepGATE Power MOSFET in a PowerFLAT 5x6 package PowerFLAT 5x6 D(5, 6, 7, 8) G(4) S(1, 2, 3) Features Order code VDS STL42P4LLF6 40 V • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss RDS(on) max. 18 mΩ ID 42 A PTOT 75 W Applications • Switching applications AM01475v4 Description This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
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