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STL10N65M2 - N-channel Power MOSFET

Description

This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology.

Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.

Features

  • Order code STL10N65M2 VDS 650 V RDS(on) max. 1.00 Ω ID 4.5 A 1 2 3 4 PowerFLAT™ 5x6 HV Figure 1: Internal schematic diagram D(5, 6, 7, 8) 8 76 5 G(4) S(1, 2, 3) 12 34 Top View.
  • Extremely low gate charge.
  • Lower RDS(on) x area vs previous generation.
  • Low gate input resistance.
  • 100% avalanche tested.
  • Zener-protected.

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Full PDF Text Transcription

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STL10N65M2 N-channel 650 V, 0.85 Ω typ., 4.5 A MDmesh M2 Power MOSFET in a PowerFLAT™ 5x6 HV package Datasheet - production data Features Order code STL10N65M2 VDS 650 V RDS(on) max. 1.00 Ω ID 4.5 A 1 2 3 4 PowerFLAT™ 5x6 HV Figure 1: Internal schematic diagram D(5, 6, 7, 8) 8 76 5 G(4) S(1, 2, 3) 12 34 Top View  Extremely low gate charge  Lower RDS(on) x area vs previous generation  Low gate input resistance  100% avalanche tested  Zener-protected Applications  Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology.
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