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STL10N60M2 - N-channel Power MOSFET

Description

This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg.

This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge.

Features

  • 1 2 3 4 PowerFLAT™ 5x6 HV Figure 1. Internal schematic diagram D(5, 6, 7, 8) 8 76 5 G(4) S(1, 2, 3) 12 34 Top View AM15540v3 Order code STL10N60M2 VDS @ TJmax 650 V RDS(on) max 0.660 Ω ID 5.5 A.
  • Extremely low gate charge.
  • Lower RDS(on) x area vs previous generation.
  • Low gate input resistance.
  • 100% avalanche tested.
  • Zener-protected.

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Full PDF Text Transcription

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STL10N60M2 N-channel 600 V, 0.580 Ω typ., 5.5 A MDmesh II Plus™ low Qg Power MOSFET in a PowerFLAT™ 5x6 HV package Datasheet - production data Features 1 2 3 4 PowerFLAT™ 5x6 HV Figure 1. Internal schematic diagram D(5, 6, 7, 8) 8 76 5 G(4) S(1, 2, 3) 12 34 Top View AM15540v3 Order code STL10N60M2 VDS @ TJmax 650 V RDS(on) max 0.660 Ω ID 5.5 A • Extremely low gate charge • Lower RDS(on) x area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected Applications • Switching applications Description This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg.
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