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STGWA50M65DF2 - IGBT

Datasheet Summary

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential.

Features

  • Maximum junction temperature: TJ = 175 °C.
  • 6 μs of minimum short-circuit withstand time.
  • VCE(sat) = 1.65 V (typ. ) @ IC = 50 A.
  • Tight parameter distribution.
  • Safer paralleling.
  • Positive VCE(sat) temperature coefficient.
  • Low thermal resistance.
  • Soft- and fast-recovery antiparallel diode.

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TO-247 long leads C (2) G (1) Sc12850_no_tab E (3) STGWA50M65DF2 Datasheet Trench gate field-stop 650 V, 50 A low-loss M series IGBT in a TO-247 long leads package Features • Maximum junction temperature: TJ = 175 °C • 6 μs of minimum short-circuit withstand time • VCE(sat) = 1.65 V (typ.) @ IC = 50 A • Tight parameter distribution • Safer paralleling • Positive VCE(sat) temperature coefficient • Low thermal resistance • Soft- and fast-recovery antiparallel diode Applications • Motor control • UPS • PFC • General purpose inverter Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.
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