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STGHU30M65DF2AG - Automotive-grade trench gate field-stop IGBT

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential.

Features

  • TAB 7 1 HU3PAK C(TAB).
  • AEC-Q101 qualified.
  • Maximum junction temperature: TJ = 175 °C.
  • 6 μs of minimum short-circuit withstand time.
  • VCE(sat) = 1.6 V (typ. ) @ IC = 30 A.
  • Tight parameter distribution.
  • Safer paralleling.
  • Low thermal resistance.
  • Soft and very fast-recovery antiparallel diode.
  • Excellent switching performance thanks to the extra driving kelvin pin.

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Full PDF Text Transcription (Reference)

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STGHU30M65DF2AG Datasheet Automotive-grade trench gate field-stop 650 V, 30 A low-loss M series IGBT in an HU3PAK package Features TAB 7 1 HU3PAK C(TAB) • AEC-Q101 qualified • Maximum junction temperature: TJ = 175 °C • 6 μs of minimum short-circuit withstand time • VCE(sat) = 1.6 V (typ.) @ IC = 30 A • Tight parameter distribution • Safer paralleling • Low thermal resistance • Soft and very fast-recovery antiparallel diode • Excellent switching performance thanks to the extra driving kelvin pin Applications G(1) K(2) E(3,4,5,6,7) • Automotive motor control • e-compressor • Industrial motor control • Power supplies and converters K2G1CTABE34567 Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.
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