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STGFW40V60F - IGBT

This page provides the datasheet information for the STGFW40V60F, a member of the STGB40V60F IGBT family.

Description

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure.

These devices are part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters.

Features

  • Maximum junction temperature: TJ = 175 °C.
  • Tail-less switching off.
  • VCE(sat) = 1.8 V (typ. ) @ IC = 40 A.
  • Tight parameters distribution.
  • Safe paralleling.
  • Low thermal resistance.

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Datasheet preview – STGFW40V60F

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Full PDF Text Transcription

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STGB40V60F, STGFW40V60F STGP40V60F, STGW40V60F Datasheet Trench gate field-stop IGBT, V series 600 V, 40 A very high speed TAB 3 1 D2PAK TAB 23 1 TO-3PF 3 2 TO-220 1 3 2 1 TO-247 C(2, TAB) G(1) E(3) G1C2TABE3_NO_DIODE Features • Maximum junction temperature: TJ = 175 °C • Tail-less switching off • VCE(sat) = 1.8 V (typ.) @ IC = 40 A • Tight parameters distribution • Safe paralleling • Low thermal resistance Applications • Welding • Power factor correction • UPS • Solar inverters • Chargers Description These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters.
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