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STGFW40H65FB - IGBT

Description

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure.

These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter.

Features

  • Maximum junction temperature: TJ = 175 °C.
  • High speed switching series.
  • Minimized tail current.
  • Very low saturation voltage: VCE(sat) = 1.6 V (typ) @ IC = 40 A.
  • Safe paralleling.
  • Tight parameter distribution.
  • Low thermal resistance.

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Full PDF Text Transcription

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STGFW40H65FB, STGW40H65FB, STGWA40H65FB Datasheet Trench gate field-stop 650 V, 40 A high speed HB series IGBT TO-3PF 3 2 1 3 12 TO-247 3 12 TO-247 long leads C(2, TAB) G(1) E(3) G1C2TE3 Features • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • Very low saturation voltage: VCE(sat) = 1.6 V (typ) @ IC = 40 A • Safe paralleling • Tight parameter distribution • Low thermal resistance Applications • Welding • Power factor correction • UPS • Solar inverters • Chargers Description These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure.
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