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STGFW20V60DF - Trench gate field-stop IGBT

Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure.

The device is part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters.

Features

  • Maximum junction temperature: TJ = 175 °C.
  • Very high speed switching series.
  • Tail-less switching off.
  • VCE(sat) = 1.8 V (typ. ) @ IC = 20 A.
  • Tight parameters distribution.
  • Safe paralleling.
  • Low thermal resistance.
  • Very fast soft recovery antiparallel diode.
  • Lead free package.

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Datasheet preview – STGFW20V60DF

Datasheet Details

Part number STGFW20V60DF
Manufacturer STMicroelectronics
File Size 703.74 KB
Description Trench gate field-stop IGBT
Datasheet download datasheet STGFW20V60DF Datasheet
Additional preview pages of the STGFW20V60DF datasheet.

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Full PDF Text Transcription

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STGFW20V60DF Trench gate field-stop IGBT, V series 600 V, 20 A very high speed Datasheet - production data TO-3PF 3 2 1 Figure 1: Internal schematic diagram C (2) Features  Maximum junction temperature: TJ = 175 °C  Very high speed switching series  Tail-less switching off  VCE(sat) = 1.8 V (typ.) @ IC = 20 A  Tight parameters distribution  Safe paralleling  Low thermal resistance  Very fast soft recovery antiparallel diode  Lead free package Applications  Photovoltaic inverters  Uninterruptible power supply  Welding  Power factor correction  Very high frequency converters G (1) Sc12850_no_tab E (3) Order code STGFW20V60DF Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure.
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