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STGB19NC60KDT4 - 600V short-circuit rugged IGBT

Description

These devices are very fast IGBTs developed using advanced PowerMESH™ technology.

This process guarantees an excellent trade-off between switching performance and low on-state behavior.

Features

  • Low on voltage drop (VCE(sat)).
  • Low CRES / CIES ratio (no cross-conduction susceptibility).
  • Short-circuit withstand time 10 μs.
  • IGBT co-packaged with ultrafast free- wheeling diode.

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Full PDF Text Transcription

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STGB19NC60KDT4, STGF19NC60KD, STGP19NC60KD 20 A, 600 V short-circuit rugged IGBT Datasheet - production data TAB 3 1 D2 PAK TAB 3 2 1 TO-220FP TO-220 3 12 Figure 1: Internal schematic diagram Features  Low on voltage drop (VCE(sat))  Low CRES / CIES ratio (no cross-conduction susceptibility)  Short-circuit withstand time 10 μs  IGBT co-packaged with ultrafast free- wheeling diode Applications  High frequency inverters  Motor drives Description These devices are very fast IGBTs developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior.
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