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STGB19NC60K - 20 A - 600 V - short circuit rugged IGBT

Description

This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.

Figure 1.

Table 1.

Features

  • Low www. DataSheet4U. com.
  • Low.
  • on-voltage drop (VCE(sat)) Cres / Cies ratio (no cross conduction susceptibility) Short circuit withstand time 10 µs IGBT co-packaged with ultra fast free-wheeling diode 3 1 2 3 1 TO-220 D2PAK.

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STGB19NC60K STGP19NC60K 20 A - 600 V - short circuit rugged IGBT Features ■ Low www.DataSheet4U.com ■ Low ■ ■ on-voltage drop (VCE(sat)) Cres / Cies ratio (no cross conduction susceptibility) Short circuit withstand time 10 µs IGBT co-packaged with ultra fast free-wheeling diode 3 1 2 3 1 TO-220 D2PAK Applications ■ ■ High frequency inverters Motor drivers Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Figure 1. Internal schematic diagram Table 1. Device summary Marking GB19NC60K GP19NC60K Package D2PAK TO-220 Packaging Tape and reel Tube Order codes STGB19NC60KT4 STGP19NC60K May 2008 Rev 2 1/15 www.st.
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