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STGB19NC60KD - 20 A - 600 V - short circuit rugged IGBT

Description

This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.

Figure 1.

Table 1.

Features

  • Low on-voltage drop (VCE(sat)).
  • Low Cres / Cies ratio (no cross conduction susceptibility).
  • Short circuit withstand time 10 µs.
  • IGBT co-packaged with Ultrafast free-wheeling diode.

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Full PDF Text Transcription

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STGB19NC60KD, STGF19NC60KD, STGP19NC60KD 20 A, 600 V short-circuit rugged IGBT Features ■ Low on-voltage drop (VCE(sat)) ■ Low Cres / Cies ratio (no cross conduction susceptibility) ■ Short circuit withstand time 10 µs ■ IGBT co-packaged with Ultrafast free-wheeling diode Applications ■ High frequency inverters ■ Motor drivers Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Datasheet − production data 3 2 1 TO-220 3 1 D²PAK 3 2 1 TO-220FP Figure 1. Internal schematic diagram Table 1.
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