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STGAP2SiCD - Galvanically isolated 4A dual gate driver

Description

The STGAP2SiCD is a dual gate driver for SiC MOSFETs which provides galvanic isolation between each gate driving channel and the low voltage control and interface circuitry.

Features

  • High voltage rail up to 1200 V.
  • Driver current capability: 4 A sink/source @ 25 °C.
  • dV/dt transient immunity ±100 V/ns.
  • Overall input-output propagation delay: 75 ns.
  • Separate sink and source option for easy gate driving configuration.
  • 4 A Miller CLAMP.
  • UVLO function.
  • Configurable interlocking function.
  • Dedicated SD and BRAKE pins.
  • Gate driving voltage up to 26 V.
  • 3.3 V, 5 V TTL/CMOS inputs with h.

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Datasheet preview – STGAP2SiCD

Datasheet Details

Part number STGAP2SiCD
Manufacturer STMicroelectronics
File Size 690.44 KB
Description Galvanically isolated 4A dual gate driver
Datasheet download datasheet STGAP2SiCD Datasheet
Additional preview pages of the STGAP2SiCD datasheet.

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Full PDF Text Transcription

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STGAP2SiCD Datasheet Galvanically isolated 4 A dual gate driver Product status link STGAP2SiCD Product label Features • High voltage rail up to 1200 V • Driver current capability: 4 A sink/source @ 25 °C • dV/dt transient immunity ±100 V/ns • Overall input-output propagation delay: 75 ns • Separate sink and source option for easy gate driving configuration • 4 A Miller CLAMP • UVLO function • Configurable interlocking function • Dedicated SD and BRAKE pins • Gate driving voltage up to 26 V • 3.
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