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STGAP2GS
Datasheet
Galvanically isolated 3 A single gate driver for Enhancement mode GaN FETs
Product status link STGAP2GS
Product label
Features
• High voltage rail up to 1200 V • Driver current capability: 2 A / 3 A source/sink @25 °C, VH = 6 V • dV/dt transient immunity ±100 V/ns • Input-output propagation delay: 45 ns • Separate sink and source option for easy gate driving configuration • UVLO function optimized for GaN • Gate driving voltage up to 15 V • 3.3 V, 5 V TTL/CMOS inputs with hysteresis • Temperature shut-down protection • Standby function • Wide body SO-8W package
Application
• Motor driver for home appliances, factory automation, industrial drives and fans.