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STB120NF10T4, STP120NF10, STW120NF10
N-channel 100 V, 9.0 mΩ typ., 110 A STripFET™ II Power MOSFETs in D²PAK, TO-220 and TO-247 packages
Datasheet - production data
TAB
TAB
D2PAK
TO-220
3 2 1
TO-247
3 2 1
Figure 1: Internal schematic diagram
D(2, TAB)
G(1) S(3)
Features
Order code STB120NF10T4
STP120NF10 STW120NF10
VDS 100 V
RDS(on) max. 10.5 mΩ
ID 110 A
Exceptional dv/dt capability 100% avalanche tested Low gate charge
Applications
Switching applications
Description
These Power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge.