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STB12NM50ND STD12NM50ND, STF12NM50ND
N-channel 500 V, 0.29 Ω, 11 A, FDmesh™ II Power MOSFET (with fast diode) in D2PAK, DPAK, TO-220FP
Features
Type
VDSS (@Tjmax) RDS(on) max ID
STB12NM50ND
550 V
0.38 Ω 11 A
STD12NM50ND 550 V
0.38 Ω 11 A
STF12NM50ND
550 V
0.38 Ω 11 A
■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance
Application
■ Switching applications
Description
FDmesh™ technology combines the MDmesh™ features with an intrinsic fast-recovery body diode. The resulting product has reduced onresistance and fast switching commutations, making it especially suitable for bridge topologies where low trr is required.
3 1
D2PAK
3 1
DPAK
3 2 1
TO-220FP
Figure 1. Internal schematic diagram
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Table 1.
STB12NM50ND Datasheet
