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STB120N10F4 - N-channel Power MOSFET

Description

These devices are N-channel Power MOSFETs developed using ST’s STripFET™ DeepGATE™ technology.

The devices have a new gate structure and are specially designed to minimize on-state resistance to provide superior switching performance.

Table 1.

Features

  • TAB 3 1 D 2PAK TAB 3 2 1 TO-220 Figure 1. Internal schematic diagram ' Ć7$% .
  •  Order codes VDS RDS(on) max. ID STB120N10F4 STP120N10F4 100 V 10 mΩ 120 A.
  • N-channel enhancement mode.
  • Very low on-resistance.
  • Low gate charge.
  • 100% avalanche rated.

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Datasheet Details

Part number STB120N10F4
Manufacturer STMicroelectronics
File Size 943.84 KB
Description N-channel Power MOSFET
Datasheet download datasheet STB120N10F4 Datasheet
Additional preview pages of the STB120N10F4 datasheet.

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Full PDF Text Transcription

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STB120N10F4, STP120N10F4 N-channel 100 V, 8 mΩ typ., 120 A, STripFET™ DeepGATE™ 2 Power MOSFETs in D PAK and TO-220 packages Datasheet − production data Features TAB 3 1 D 2PAK TAB 3 2 1 TO-220 Figure 1. Internal schematic diagram ' Ć7$% *  Order codes VDS RDS(on) max. ID STB120N10F4 STP120N10F4 100 V 10 mΩ 120 A • N-channel enhancement mode • Very low on-resistance • Low gate charge • 100% avalanche rated Applications • Switching applications Description These devices are N-channel Power MOSFETs developed using ST’s STripFET™ DeepGATE™ technology. The devices have a new gate structure and are specially designed to minimize on-state resistance to provide superior switching performance. 6  $0Y Order codes STB120N10F4 STP120N10F4 Table 1.
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