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SGSP369 - N-CHANNEL POWER MOS TRANSISTORS

Download the SGSP369 datasheet PDF. This datasheet also covers the SGSP364 variant, as both devices belong to the same n-channel power mos transistors family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (SGSP364-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by STMicroelectronics

Part Number Description
SGSP361 N-CHANNEL POWER MOS TRANSISTORS
SGSP362 N-CHANNEL POWER MOS TRANSISTORS
SGSP363 N-CHANNEL POWER MOS TRANSISTORS
SGSP364 N-CHANNEL POWER MOS TRANSISTORS
SGSP367 N-CHANNEL POWER MOS TRANSISTORS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SGSP364 SGSP369 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE Voss ROS(on) 10 SGSP364 450 V 1.5 {} 5A SGSP369 500 V 1.5 {} 5A • HIGH SPEED SWITCHING APPLICATIONS • HIGH VOLTAGE - FOR ELECTRONIC LAMP BALLAST • ULTRA FAST SWITCHING • EASY DRIVE - REDUCED COST AND SIZE INDUSTRIAL APPLICATIONS: • ELECTRONIC LAMP BALLAST • DC SWITCH N - channel enhancement mode POWER MOS field effect transistors. Easy drive and very fast switching times make these POWER MOS transistors ideal for high speed switching applications. Applications include DC switch, constant current source, ultrasonic equipment and electronic ballast for fluorescent lamps.
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