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SGSP364 SGSP369
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
TYPE
Voss
ROS(on)
10
SGSP364 450 V
1.5 {}
5A
SGSP369 500 V
1.5 {}
5A
• HIGH SPEED SWITCHING APPLICATIONS • HIGH VOLTAGE - FOR ELECTRONIC LAMP
BALLAST • ULTRA FAST SWITCHING • EASY DRIVE - REDUCED COST AND SIZE
INDUSTRIAL APPLICATIONS: • ELECTRONIC LAMP BALLAST • DC SWITCH
N - channel enhancement mode POWER MOS field effect transistors. Easy drive and very fast switching times make these POWER MOS transistors ideal for high speed switching applications. Applications include DC switch, constant current source, ultrasonic equipment and electronic ballast for fluorescent lamps.
SGSP364 Datasheet
