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SGSP367 - N-CHANNEL POWER MOS TRANSISTORS

Download the SGSP367 datasheet PDF. This datasheet also covers the SGSP363 variant, as both devices belong to the same n-channel power mos transistors family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (SGSP363-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by STMicroelectronics

Part Number Description
SGSP361 N-CHANNEL POWER MOS TRANSISTORS
SGSP362 N-CHANNEL POWER MOS TRANSISTORS
SGSP363 N-CHANNEL POWER MOS TRANSISTORS
SGSP364 N-CHANNEL POWER MOS TRANSISTORS
SGSP369 N-CHANNEL POWER MOS TRANSISTORS

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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.r..=,-L=. S~DG©OOS@~-O1J~H©lOJOOM@[St(!O]ON©~ SGSP363 SGSP367 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE SGSP363 SGSP367 Voss 250 V 200 V Ros(on) 0.450 0.330 10 10 A 12 A • HIGH SPEED SWITCHING APPLICATIONS • TELECOMMUNICATION APPLICATIONS • RATED FOR UNCLAMPED INDUCTIVE SWITCHING (ENERGY TEST) • • ULTRA FAST SWITCHING • EASY DRIVE FOR REDUCED COST AND SIZE INDUSTRIAL APPLICATIONS: • ROBOTICS • SWITCHING POWER SUPPLIES N - channel enhancement mode POWER MOS field effect transistor. Easy drive and very fast switching times make this POWER MOS transistor ideal for high speed switching applications. Typical applications include robotics, uninterruptible power supplies, motor control and solenoid drives.
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