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BULT118
High voltage fast-switching NPN power transistor
Features
■ High voltage capability
■ Minimum lot-to-lot spread for reliable operation
■ Very high switching speed
t(s)Applications uc■ Electronic ballast for fluorescent lighting rod■ Flyback and forward single transistor low power P t(s)converters lete ucDescription so rodThe device is manufactured using high voltage
multi-epitaxial planar technology for high
b Pswitching speeds and medium voltage capability. - O teIt uses a cellular emitter structure with planar ) leedge termination to enhance switching speeds t(s owhile maintaining the wide RBSOA. c bsThe device is designed for use in lighting u Oapplications and low cost switch-mode power d -supplies.
SOT-32
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Figure 1.
BULT118 Datasheet
