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BULT3N4
Medium voltage fast-switching NPN power transistor
Features
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Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed
Application
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Electronic ballast for fluorescent lighting
3 2
SOT-32
1
Description
The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is expressly designed for a new solution to be used in compact fluorescent lamps, where it is coupled with the BULT3P3, its complementary PNP transistor. Figure 1.
Internal schematic diagram
Table 1.
BULT3N4 Datasheet
