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BUL98 - High voltage fast-switching NPN power transistor

Description

The device is manufactured using high voltage Multi-Epitaxial Planar technology for costeffective high performance.

It uses a Hollow Emitter structure to enhance switching speeds.

The device is designed for use in lighting applications and low cost switch-mode power supplies.

Features

  • High voltage capability Minimum lot-to-lot spread for reliable operation Low base drive requirements Very high switching speed Fully characterized at 125 °C In compliance with the 2002/93/EC European Directive 1 2 3 TO-220.

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BUL98 High voltage fast-switching NPN power transistor General features ■ ■ ■ ■ ■ ■ High voltage capability Minimum lot-to-lot spread for reliable operation Low base drive requirements Very high switching speed Fully characterized at 125 °C In compliance with the 2002/93/EC European Directive 1 2 3 TO-220 Applications ■ ■ Electronic transformers for halogen lamps Switch mode power supply Internal schematic diagram Description www.DataSheet4U.com The device is manufactured using high voltage Multi-Epitaxial Planar technology for costeffective high performance. It uses a Hollow Emitter structure to enhance switching speeds. The device is designed for use in lighting applications and low cost switch-mode power supplies.
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